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VT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • TMBS TO-220AB ®.
  • Trench MOS Schottky technology TO-262AA.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT1045C PIN 1 PIN 3 3 1 VIT1045C PIN 1 PIN 3 2 3.
  • Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K.

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Datasheet Details

Part number VT1045C
Manufacturer Vishay
File Size 189.51 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT1045C Datasheet

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Full PDF Text Transcription

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New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT1045C PIN 1 PIN 3 3 1 VIT1045C PIN 1 PIN 3 2 3 • Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
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