VT3060C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- AEC-Q101 qualified
- Material categorization: For definitions of pliance
- Part: VT3060C-M3
- Manufacturer: Vishay (official site)
- Size: 136.09 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VT3060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VT3060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VT3060G-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VT3045BP | Trench MOS Barrier Schottky Rectifier |
VT3060C-M3 Description
.vishay. VT3060C-M3, VIT3060C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT3060C 3 2 1 PIN 1 PIN 2 PIN.