Datasheet4U Logo Datasheet4U.com

VT3060C-M3 Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

Datasheet Details

Part number VT3060C-M3
Manufacturer Vishay
File Size 136.09 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT3060C-M3 Datasheet

Overview

www.vishay.com VT3060C-M3, VIT3060C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
VT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VT3060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VT3045BP Trench MOS Barrier Schottky Rectifier
VT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT3045CBP Trench MOS Barrier Schottky Rectifier
VT3045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT3080C Dual Trench MOS Barrier Schottky Rectifier