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VT3060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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VT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VT3060G

Datasheet Details

Part number	VT3060G
Manufacturer	Vishay
File Size	143.27 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT3060G Datasheet
Additional preview pages of the VT3060G datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Not recommended for PCB bottom side wave mounting.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99.

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Published: Feb 7, 2012 |