Datasheet4U.com

VT3060C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

VT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VT3060C-M3

Datasheet Details

Part number	VT3060C-M3
Manufacturer	Vishay
File Size	136.09 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VT3060C-M3 Datasheet
Additional preview pages of the VT3060C-M3 datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VT30CT - Dual Element (PerkinElmer Optoelectronics)
VT30N1 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT30N2 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT30N3 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT30N4 - Photoconductive Cell (PerkinElmer Optoelectronics)
VT3-801F - SMD VC-TCXO (QuartzCom)
VT3-801FL - SMD VC-TCXO (QuartzCom)
VT3-801FM - SMD VC-TCXO (QuartzCom)

Other Datasheets by Vishay

VT3060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VT3060C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT3060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VT3045BP - Trench MOS Barrier Schottky Rectifier
VT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 5, 2016 |