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VT4045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS®
TO-220AC
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 1 PIN 2
2 1
CASE
PRIMARY CHARACTERISTICS
IF(DC)
40 A
VRRM IFSM VF at IF = 40 A
45 V 240 A 0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current) Package
200 °C TO-220AC
Diode variation
Common cathode
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
VT4045BP-M3 Datasheet
