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VT4060C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT4060C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT4060C PIN 1 PIN 3 2 3 1.

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Datasheet Details

Part number VT4060C
Manufacturer Vishay
File Size 186.86 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VT4060C Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT4060C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT4060C PIN 1 PIN 3 2 3 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 60 V 240 A 0.
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