Datasheet4U.com

VT4060C-E3 Datasheet Dual Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

📥 Download Datasheet

VT4060C-E3 dual trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VT4060C-E3
Manufacturer	Vishay
File Size	138.33 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Download	VT4060C-E3 Download (PDF)

Overview

www.vishay.com VT4060C-E3, VIT4060C-E3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number	Description
VT4060C	Dual Trench MOS Barrier Schottky Rectifier
VT4045BP	Trench MOS Barrier Schottky Rectifier
VT4045BP-M3	Trench MOS Barrier Schottky Rectifier
VT4045C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT4045C-M3	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT4045CHM3	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier