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BAR63V-02V Datasheet

RF PIN Diode

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RF PIN Diode - Single in SOD-523
BAR63V-02V
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
1
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
1 while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
2
2
16863
Features
• Low forward resistance
• Space saving SOD-523 package with
low series inductance
e3
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-02V
Ordering code
BAR63V-02V-GS18 or BAR63V-02V-GS08
Marking
C
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Test condition
Symbol
VR
IF
Tj
Tstg
Value
50
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Symbol
RthJS
Value
100
Unit
K/W
Document Number 85642
Rev. 1.5, 29-Jun-05
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

BAR63V-02V Datasheet

RF PIN Diode

No Preview Available !

BAR63V-02V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
Diode capacitance
f = 1 MHz, VR = 0
f = 1 MHz, VR = 5 V
Forward resistance
f = 100 MHz, IF = 1 mA
f = 100 MHz, IF = 5 mA
f = 100 MHz, IF = 10 mA
Charge carrier life time
IF = 10 mA, IR = 6 mA, iR = 3 mA
Symbol
VR
IR
VF
CD
CD
rf
rf
rf
trr
Min
50
Typ.
0.28
0.23
2.0
1.1
0.9
115
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Max
10
1.2
0.3
2.0
Unit
V
nA
V
pF
pF
ns
6
5
4
3
2
1
0
0.1
18341_1
f = 100 MHz
1.0 10
IF - Forward Current ( mA )
100
Figure 1. Forward Resistance vs. Forward Current
100.00
10.00
1.00
0.10
0.01
0.5
18325
0.6 0.7 0.8 0.9
VF - Forward Voltage ( V )
1.0
Figure 3. Forward Current vs. Forward Voltage
0.30
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
0.00
0
18333
4 8 12 16 20 24 28
VR - Reverse V oltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
120
100
80
60
40
20
18329
0
0.01
0.1 1.0 10 100 1000
IR - Reverse Current ( µA )
Figure 4. Reverse Voltage vs. Reverse Current
www.vishay.com
2
Document Number 85642
Rev. 1.5, 29-Jun-05


Part Number BAR63V-02V
Description RF PIN Diode
Maker Vishay Siliconix
Total Page 4 Pages
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