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BAT46W-V Datasheet

Small Signal Schottky Diodes

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Small Signal Schottky Diode
BAT46W-V
Vishay Semiconductors
Features
• For general purpose applications
• This diode features very low turn-on
voltage and fast switching.
• This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharges.
• This diode is also available in the DO-35 case with
the type designation BAT46 and in the MiniMELF
case with the type designation LL46.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT46W-V
Ordering code
BAT46W-V-GS18 or BAT46W-V-GS08
17431
Type Marking
L6
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
tp < 1 s, δ < 0.5
Surge forward current
Power dissipation1)
tp < 10 ms
Tamb = 65 °C
1) Valid provided that electrodes are kept at ambient temperature
Symbol
VRRM
IF
IFRM
IFSM
Ptot
Value
100
1501)
3501)
7501)
1501)
Unit
V
mA
mA
mA
mW
Document Number 85663 For technical questions within your region, please contact one of the following:
Rev. 1.4, 05-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

BAT46W-V Datasheet

Small Signal Schottky Diodes

No Preview Available !

www.DataSheet.co.kr
BAT46W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tamb
Tstg
Value
3001)
125
- 55 to + 125
- 55 to + 150
Unit
K/W
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 100 µA (pulsed)
VR = 1.5 V
VR = 1.5 V, Tj = 60 °C
VR = 10 V
Leakage current2)
VR = 10 V, Tj = 60 °C
VR = 50 V
VR = 50 V, Tj = 60 °C
VR = 75 V
VR = 75 V, Tj = 60 °C
IF = 0.1 mA
Forward voltage2)
IF = 10 mA
IF = 250 mA
Diode capacitance
VR = 0 V, f = 1 MHz
VR = 1 V, f = 1 MHz
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
Tj = 60 °C
100
10
25 °C
1
0.1
Symbol
V(BR)
IR
IR
IR
IR
IR
IR
IR
IR
VF
VF
VF
CD
CD
Min
100
100
10
1
0.1
Typ. Max Unit
V
0.5 µA
5 µA
0.8 µA
7.5 µA
2 µA
15 µA
5 µA
20 µA
250 mV
450 mV
1000
mV
10 pF
6 pF
Tj = 60 °C
Tj = 25 °C
0.01
0
0.2 0.4 0.6 0.8
1 1.2
18546
VF - Forward Voltage (V)
Figure 1. Typical Instantaneous Forward Characteristics
0.01
0
20 40 60 80
18547
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
100
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85663
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 05-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BAT46W-V
Description Small Signal Schottky Diodes
Maker Vishay Siliconix
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BAT46W-V Datasheet PDF






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