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DG613 - High-Speed / Low-Glitch D/CMOS Analog Switches

General Description

The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches.

Charge injection has been minimized to optimize performance in fast sample-andhold applications.

Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off.

Key Features

  • Fast switching - tON: 12 ns.
  • Low charge injection: ± 2 pC.
  • Wide bandwidth: 500 MHz.
  • 5 V CMOS logic compatible.
  • Low RDS(on): 18 .
  • Low quiescent power : 1.2 nW.
  • Single supply operation.

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Datasheet Details

Part number DG613
Manufacturer Vishay
File Size 179.62 KB
Description High-Speed / Low-Glitch D/CMOS Analog Switches
Datasheet download datasheet DG613 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications. Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611, DG612, DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.