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Vishay Intertechnology Electronic Components Datasheet

FCSP1H40LTR Datasheet

Chip Scale Package Schottky Barrier Rectifier

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FCSP1H40LTR pdf
FCSP1H40LTR
Vishay High Power Products
FlipKY®, 1 A
Chip Scale Package Schottky Barrier Rectifier
FEATURES
• Ultra low VF per footprint area
• Low leakage
• Low thermal resistance
• One-fifth footprint of SMA
• Super low profile (0.6 mm)
• Available tested on tape and reel
RoHS
COMPLIANT
FlipKY®
APPLICATIONS
• Reverse polarity protection
• Current steering
• Freewheeling
• Flyback
• Oring
PRODUCT SUMMARY
IF(AV)
VR
1A
40 V
DESCRIPTION
Vishay's FlipKY® product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
lowest VF to PCB footprint area in industry. The four
bump 1.5 x 1.5 mm devices can deliver up to 1 A and occupy
only 2.3 mm2 of board space. The anode and cathode
connections are made through solder bump pads on one
side of the silicon enabling designers to strategically place
the diodes on the PCB. This design not only minimizes board
space but also reduces thermal resistance and inductance,
which can improve overall circuit efficiency.
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Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
VF
TJ
Rectangular waveform
1 Apk, TJ = 125 °C
MAX.
40
1
250
0.42
- 55 to 150
UNITS
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
FCSP1H40LTR
40
UNITS
V
Document Number: 94493
Revision: 27-Mar-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

FCSP1H40LTR Datasheet

Chip Scale Package Schottky Barrier Rectifier

No Preview Available !

FCSP1H40LTR pdf
FCSP1H40LTR
Vishay High Power Products
FlipKY®, 1 A
Chip Scale Package
Schottky Barrier Rectifier
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current at 25 °C
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TPCB = 117 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.0
250
21
10
2.0
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
See fig. 1
VFM (1)
1A
2A
1A
2A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
CT
Maximum voltage rate of charge
dV/dt
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(1) Pulse width < 300 µs, duty cycle < 2 %
VR = Rated VR
TJ = 25 °C
VR = 20 V
VR = 10 V
VR = 5 V
VR = Rated VR
TJ = 125 °C
VR = 20 V
VR = 10 V
VR = 5 V
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Rated VR
TYP.
0.48
0.54
0.38
0.48
3
0.5
0.2
0.15
2.5
0.9
0.6
0.5
-
-
MAX. UNITS
0.52
0.59
V
0.42
0.52
15
1
µA
0.5
0.3
4
2
mA
1.5
1
160 pF
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
TEST CONDITIONS
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 150
UNITS
°C
40
°C/W
62
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94493
Revision: 27-Mar-08


Part Number FCSP1H40LTR
Description Chip Scale Package Schottky Barrier Rectifier
Maker Vishay Siliconix
Total Page 5 Pages
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FCSP1H40LTR Datasheet PDF
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