IRFP048R Datasheet | Vishay

.vishay. IRFP048R, Si HFP048R Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (n C) Qgs (n C) Qgd (n C) Configuration 60 VGS = 10 V 110 29 38 Single TO-247AC S N-Channel MOSFET Features - Dynamic d V/dt rating - Isolated central mounting hole - 175 °C operating temperature - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFP048RPb...