IRFP048
Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Dynamic dV/dt Rating
- Isolated Central Mounting Hole
- 175 °C Operating Temperature
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC Available RoHS* PLIANT
