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IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
52 13 18 Single
0.52
D2PAK (TO-263)
D
G
FEATURES
• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
Available
• Effective Coss Specified • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.