IRFS11N50A Description
l l l Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes .irf. 1 9/13/99 IRFS11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current...
IRFS11N50A Key Features
- Uninterruptable Power Supply
- High speed power switching
- VDSS 500V Rds(on) max 0.52Ω ID 11A Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified ( See AN 1001) D 2 P ak