IRFS11N50A Datasheet | Vishay

FEATURES - Low Gate Charge Qg results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Available Ruggedness - Fully Characterized Capacitance and Avalanche Voltage and Current Available - Effective Coss Specified - Material categorization: For definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and/or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information/tables in this datasheet for details. GD S S N-Channel MOSFET APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching TYPICAL SMPS TOPOLOGIES - Two Transistor Forward - Half and Full Bridge - Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HFS11N50A-GE3 IRFS11N50APb F D2PAK (TO-263) Si HFS11N50ATRR-GE3a IRFS11N50ATRRPa D2PAK (TO-263) Si HFS11N50ATRL-GE3a IRFS11N50ATRLPa ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25...