SFH691AT Overview
Description
The SFH691AT has a GaAs infrared emitting diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
Key Features
- SOP (small outline package)
- Isolation test voltage, 3750 VRMS (1 s)
- High collector emitter breakdown voltage, VCEO = 70 V
- Bidirectional AC input
- Low saturation voltage
- Fast switching times
- Temperature stable
- Low coupling capacitance
- End stackable, 0.100" (2.54 mm) spacing
- Material categorization: For definitions of compliance please see
