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Vishay Intertechnology Electronic Components Datasheet

SI1958DH Datasheet

Dual N-Channel MOSFET

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Dual N-Channel 20 V (D-S) MOSFET
Si1958DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.205 at VGS = 4.5 V
0.340 at VGS = 2.5 V
ID (A)a
1.3a
1.3a
Qg (Typ.)
1.2 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch for Portable Applications
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Marking Code
CC XX
Lot Traceability
and Date Code
Part # Code
G1
D1
D2
G2
Top View
Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free)
Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
± 12
1.3a
1.3a
1.3a
1.2a
4
1.0
0.61c
1.25
0.8
0.74b, c
0.47b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74340
S10-0792-Rev. C, 05-Apr-10
Symbol
RthJA
RthJF
Typical
130
80
Maximum
170
100
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI1958DH Datasheet

Dual N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si1958DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.3 A
VGS = 2.5 V, ID = 0.29 A
VDS = 4 V, ID = 1.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 1.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tr
VDS = 10 V, VGS = 4.5 V, ID = 1.6 A
f = 1 MHz
VDD = 10 V, RL = 8.3 Ω
ID 1.2 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 8.3 Ω
ID 1.2 A, VGEN = 10 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 1.2 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
20
0.6
4
Typ.
Max.
Unit
18.5
- 3.2
0.165
0.275
5.5
V
mV/°C
1.6
± 100
1
10
0.205
0.340
V
ns
µA
A
Ω
S
105
26
15
2.5 3.8
1.2 1.8
0.4
0.3
4
8 12
25 40
10 15
10 15
5 10
10 15
10 15
8 15
pF
nC
Ω
ns
1
4
0.85 1.2
20 40
15 30
16
4
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74340
S10-0792-Rev. C, 05-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI1958DH
Description Dual N-Channel MOSFET
Maker Vishay Siliconix
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