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Si1901DL
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
3.8 @ VGS = –4.5 V 5.0 @ VGS = –2.5 V
ID (mA)
–180 –100
SOT-363
SC-70 (6-Leads) Marking Code QD G1 D2 2 3 5 4 G2 S2 XX YY Lot Traceability and Date Code Part # Code
S1
1
6
D1
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
Limit
–20 "8 –180 –140 –500 0.20 0.13 –55 to 150
Unit
V
mA A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a.
SI1901DL Datasheet
