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Dual P-Channel 1.8 V (G-S) MOSFET
Si1905DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) -8
RDS(on) (Ω) 0.600 at VGS = - 4.5 V 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V
ID (A) ± 0.60 ± 0.50 ± 0.42
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • 1.