SI1972DH Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - pliant to Ro HS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) - Load Switch for Portable Applications 6 D1 Marking Code CE XX YY D1 D2 S1 G1 G2 D2 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 1.3a 1.3a 1.3a 1.2 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 .vishay. 1 Datasheet pdf - http://..net/ Symbol t≤5s Steady State Rth JA Rth JF Typical 130 80 Maximum 170 100 Unit °C/W .Data Sheet.co.kr Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On...