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Vishay Intertechnology Electronic Components Datasheet

SI2336DS Datasheet

N-Channel MOSFET

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Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.042 at VGS = 4.5 V
30 0.046 at VGS = 2.5 V
0.052 at VGS = 1.8 V
ID (A)a
5.2
4.9
4.1
Qg (Typ.)
5.7 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2336DS (N4)*
* Marking Code
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
±8
TC = 25 °C
5.2
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
4.1
4.3b, c
TA = 70 °C
3.5b, c
Pulsed Drain Current
IDM 20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
1.5
1.0b, c
TC = 25 °C
1.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.1
1.25b, c
TA = 70 °C
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Document Number: 71978
S10-2247-Rev. A, 04-Oct-10
Typical
80
55
Maximum
100
70
Unit
°C/W
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI2336DS Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si2336DS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 4.5 V, ID = 3.8 A
VGS 2.5 V, ID = 3.6 A
VGS 1.8 V, ID = 2 A
VDS = 15 V, ID = 3.8 A
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 3.4 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
Qgd
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
tr
td(off)
tf
td(on)
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 4.5 V, Rg = 1
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 8 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
Body Diode Voltage
ISM
VSD IS = 3.5 A, VGS 0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
trr
Qrr
ta
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
30
0.4
10
0.6
Typ. Max. Unit
31
- 2.7
0.034
0.038
0.041
30
V
mV/°C
1
± 100
1
10
0.042
0.046
0.052
V
nA
µA
A
S
560
60
27
10 15
5.7 8.6
0.85
0.75
36
6 12
10 20
20 40
10 20
5 10
10 20
17 30
10 20
pF
nC
ns
1.5
A
20
0.8 1.2
V
15 30 ns
6 12 nC
8
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71978
S10-2247-Rev. A, 04-Oct-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI2336DS
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI2336DS Datasheet PDF






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