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P-Channel 1.8-V (G-S) MOSFET
Si2331DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.048 at VGS = - 4.5 V - 12 0.062 at VGS = - 2.5 V
0.090 at VGS = - 1.8 V
ID (A) - 3.6 - 3.2 - 2.7
TO-236 (SOT-23)
G1 S2
3D
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS
APPLICATIONS • Load Switch • PA Switch
Top View Si2331DS *(E1) * Marking Code
Ordering Information: Si2331DS-T1-E3 (Lead (Pb)-free) Si2331DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 3.6 - 2.9
- 3.2 - 2.
SI2331DS Datasheet
