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N-Channel 30 V (D-S) MOSFET
Si2336DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.042 at VGS = 4.5 V
30
0.046 at VGS = 2.5 V
0.052 at VGS = 1.8 V
TO-236 (SOT-23)
ID (A)a 5.2 4.9 4.1
Qg (Typ.) 5.7 nC
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters
D
• Boost Converters
G
Top View Si2336DS (N4)* * Marking Code
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
±8
TC = 25 °C
5.
SI2336DS Datasheet
