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Vishay Intertechnology Electronic Components Datasheet

SI2337DS Datasheet

P-Channel MOSFET

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www.vishay.com
Si2337DS
Vishay Siliconix
P-Channel 80 V (D-S) MOSFET
SOT-23 (TO-236)
D
3
FEATURES
• TrenchFET® power MOSFET
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Marking code: E7
1
G
Top View
2
S
S
G
Available
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -10 V
RDS(on) max. () at VGS = -6 V
Qg typ. (nC)
ID (A) a
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
-80
0.270
0.303
7
-2.2
Single
SOT-23
Si2337DS-T1-E3
Si2337DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current
Continuous source-drain diode current
Avalanche current
Single-pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
D
P-Channel MOSFET
LIMIT
-80
± 20
-2.2
-1.75
-1.2 b, c
-0.96 b, c
-7
-2.1
-0.63 b, c
11
6
2.5
1.6
0.76 b, c
0.48 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
t 10 s
Maximum junction-to-foot (drain)
Steady state
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 166 °C/W
SYMBOL
RthJA
RthJF
TYPICAL
120
40
MAXIMUM
166
50
UNIT
°C/W
S19-0386-Rev. F, 20-May-2019
1
Document Number: 73533
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SI2337DS Datasheet

P-Channel MOSFET

No Preview Available !

www.vishay.com
Si2337DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS VGS = 0 V, ID = -250 μA
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
VDS/TJ
VGS(th)/TJ
VGS(th)
ID = -250 μA
VDS = VGS, ID = -250 μA
Gate-source leakage
IGSS VDS = 0 V, VGS = ± 20 V
Zero gate voltage drain current
VDS = -80 V, VGS = 0 V
IDSS VDS = -80 V, VGS = 0 V, TJ = 55 °C
On-state drain current a
ID(on)
VDS 5 V, VGS = -10 V
Drain-source on-state resistance a
RDS(on)
VGS = -10 V, ID = -1.2 A
VGS = -6 V, ID = -1.1 A
Forward transconductance a
Dynamic b
gfs VDS = -15 V, ID = -1.2 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Ciss
Coss
Crss
Qg
VDS = -40 V, VGS = 0 V, f = 1 MHz
VDS = -40 V, VGS = -10 V, ID = -1.2 A
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous source-drain diode current
Pulse diode forward current a
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
IS
ISM
VSD
trr
Qrr
ta
tb
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
VDS = -40 V, VGS = -6 V, ID = -1.2 A
f = 1 MHz
VDD = -40 V, RL = 42
ID -0.96 A, VGEN = -10 V, Rg = 1
VDD = -40 V, RL = 42
ID -0.96 A, VGEN = -6 V, Rg = 1
TC = 25 °C
IS = 0.63 A
IF = 0.63 A, di/dt = 100 A/μs,
TJ = 25 °C
MIN.
-80
-
-
-2
-
-
-
-7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-35.8
5.45
-
-
-
-
-
0.216
0.242
4.3
-
-
-
-4
± 100
-1
-10
-
0.270
0.303
-
V
mV/°C
V
nA
μA
A
S
500 -
40 - pF
25 -
11 17
7 11
nC
2.1 -
3.2 -
4.8 -
10 15
15 23
20 30
15 23
ns
15 23
18 27
20 30
12 18
- -2.1
- -7
-0.8 -1.2
30 45
45 70
25 -
5-
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0386-Rev. F, 20-May-2019
2
Document Number: 73533
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SI2337DS
Description P-Channel MOSFET
Maker Vishay Siliconix
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SI2337DS Datasheet PDF






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