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SI3410DV Datasheet

N-Channel MOSFET

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N-Channel 30-V (D-S) MOSFET
Si3410DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0195 at VGS = 10 V
0.023 at VGS = 4.5 V
ID (A)a
8
8
Qg (Typ.)
9.2 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Load Switch
• Low Current dc-to-dc
TSOP-6
Top View
D1
6D
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
AM XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free)
Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
Limit
30
± 20
8a
8a
7.5b,c
5.9b,c
30
2.7
1.7b,c
4.1
2.6
2b,c
1.25b,c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot
t5s
Steady State
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
Symbol
RthJA
RthJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3410DV Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3410DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 4 A
VDS = 10 V, ID = 5 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
VSD
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 1.7 A, VGS = 0 V
IF = 3 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ.
Max.
Unit
30 V
33
- 6.2
mV/°C
1 3V
± 100
nA
1
µA
10
20 A
0.016
0.019
0.0195
0.023
Ω
24 S
1295
170
72
21.8
9.2
3.8
2.5
2.4
21
14
20
9
10
8
21
8
33
14
40
25
40
18
20
16
35
16
pF
nC
Ω
ns
0.77
21
15
13
8
2.7
30
1.2
40
30
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3410DV
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI3410DV Datasheet PDF






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