SI3410DV
Key Features
- ID (A)a 8 8 Qg (Typ.) 9.2 nC PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V
- TrenchFET® Power MOSFET
- pliant to RoHS Directive 2002/95/EC
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| SI3415 | Micro Commercial Components | P-Channel MOSFET |
| SI3415 | HAOHAI | P-Channel Enhancement-Mode MOSFET |