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SI3451DV - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • PWM Optimized.
  • 100 % Rg tested RoHS.

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Datasheet Details

Part number SI3451DV
Manufacturer Vishay
File Size 148.28 KB
Description P-Channel MOSFET
Datasheet download datasheet SI3451DV Datasheet

Full PDF Text Transcription for SI3451DV (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI3451DV. For precise diagrams, and layout, please refer to the original PDF.

New Product Si3451DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 2.8 - 2...

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n) (Ω) 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 2.8 - 2.1 Qg (Typ) 3.2 nC FEATURES • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg tested RoHS COMPLIANT www.DataSheet4U.com TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code AD XXX Lot Traceability and Date Code Part # Code (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 2.8 - 2.3 - 2.6b, c - 2.1b, c - 10 -

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