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Si3475DV
New Product
Vishay Siliconix
P-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 200 rDS(on) (Ω) 1.61 at VGS = - 10 V 1.65 at VGS = - 6 V ID (A)a - 0.95 - 0.93 Qg (Typ) 8 nC
FEATURES
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies
RoHS
COMPLIANT
TSOP-6 Top View
S
D 1 6 D
3 mm D
2
5
D Marking Code AI XXX
G
G
3
4
S
Lot Traceability and Date Code
Part # Code 2.85 mm
D P-Channel MOSFET
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.