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Vishay Intertechnology Electronic Components Datasheet

SI3475DV Datasheet

P-Channel MOSFET

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New Product
P-Channel 200-V (D-S) MOSFET
Si3475DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 200
1.61 at VGS = - 10 V
1.65 at VGS = - 6 V
ID (A)a
- 0.95
- 0.93
Qg (Typ)
8 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
RoHS
COMPLIANT
• Active Clamp Circuits in DC/DC Power Supplies
TSOP-6
Top View
D1
6D
S
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
AI XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot
t 5 sec
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
51
32
G
D
P-Channel MOSFET
Limit
- 200
± 20
- 0.95a
- 0.77
- 0.75b,c
- 0.59b,c
-3
- 2.6
1.6b,c
3
0.45
3.2
2.1
2b,c
1.25b,c
- 55 to 150
Unit
V
A
mJ
W
°C
Maximum
62.5
39
Unit
°C/W
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3475DV Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3475DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 200 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 0.9 A
VGS = - 6 V, ID = - 0.7 A
VDS = - 10 V, ID = - 0.9 A
VDS = - 50 V, VGS = 0 V, f = 1 MHz
VDS = - 100 V, VGS = - 10 V, ID = - 1 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 100 V, VGS = - 6 V, ID = - 1 A
f = 1 MHz
VDD = - 100 V, RL = 100 Ω
ID - 1 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 100 V, RL = 100 Ω
ID - 1 A, VGEN = - 6 V, Rg = 1 Ω
TC = 25 °C
IS = - 1 A, VGS = 0 V
IF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C
Min
- 200
-2
-2
Typ
- 240
6.2
1.34
1.37
3.5
500
26
18
11.7
7.8
2
3.7
9
9
11
28
12
14
29
23
14
- 0.81
84
235
46
38
Max
-4
± 100
-1
- 10
1.61
1.65
18
12
14
14
18
42
18
21
44
35
21
- 0.95
-3
- 1.2
130
350
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3475DV
Description P-Channel MOSFET
Maker Vishay Siliconix
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SI3475DV Datasheet PDF






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