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SI3475DV - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-200V.
  • ID =-0.95 A (VGS =-10V).
  • RDS(ON) ＜ 1.61Ω (VGS =-10V).
  • RDS(ON) ＜ 1.65Ω (VGS =-6V) S G ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 1 Drain 4 Source 2 Drain 5 Drain D 3 Gate 6 Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc = 25℃ Continuous Drain Current (TJ = 150 °C) (Not.

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SMD Type P-Channel MOSFET SI3475DV (KI3475DV) MOSFET ■ Features ● VDS (V) =-200V ● ID =-0.95 A (VGS =-10V) ● RDS(ON) ＜ 1.61Ω (VGS =-10V) ● RDS(ON) ＜ 1.65Ω (VGS =-6V) S G ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 1 Drain 4 Source 2 Drain 5 Drain D 3 Gate 6 Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc = 25℃ Continuous Drain Current (TJ = 150 °C) (Note.1,2) Tc = 70℃ Ta = 25℃ Pulsed Drain Current (Note.1,2) Ta = 70℃ Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH Tc = 25℃ Power Dissipation (Note.1,2) Tc = 70℃ Ta = 25℃ (Note.1,2) Ta = 70℃ Thermal Resistance.