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Vishay Intertechnology Electronic Components Datasheet

SI3477DV Datasheet

P-Channel MOSFET

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Si3477DV
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) ()
0.0175 at VGS = - 4.5 V
0.023 at VGS = - 2.5 V
0.033 at VGS = - 1.8 V
ID (A)a
-8
-8
-8
Qg (Typ.)
28.3 nC
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converters
(4) S
16
3 mm
25
34
2.85 mm
Marking Code
BB XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 12
± 10
- 8a
- 8a
- 8a, b, c
- 7.2b, c
- 40
- 3.5
- 1.67b, c
4.2
2.7
2.0b, c
1.3b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Document Number: 70865
S10-1536-Rev. A, 19-Jul-10
Typical
50
22
Maximum
62.5
30
Unit
°C/W
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Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3477DV Datasheet

P-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3477DV
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS - 4.5 V, ID = - 9 A
Drain-Source On-State Resistancea
RDS(on)
VGS - 2.5 V, ID = - 7.9 A
VGS - 1.8 V, ID = - 2.2 A
Forward Transconductancea
Dynamicb
gfs VDS = - 6 V, ID = - 9 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 6 V, VGS = - 10 V, ID = - 9 A
Gate-Source Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 9 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.83
ID - 7.2 A, VGEN = - 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.83
ID - 7.2 A, VGEN = - 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = - 7.2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 7.2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
- 12
- 0.4
- 20
0.9
Typ. Max. Unit
- 4.1
2.5
0.014
0.019
0.026
30
- 1.0
± 100
-1
- 10
0.0175
0.023
0.033
V
mV/°C
V
nA
µA
A
S
2600
620
625
58
28.3
4.2
7.8
4.5
25
30
65
35
10
10
65
30
90
45
9.0
40
45
100
55
15
15
100
45
pF
nC
ns
- 0.8
50
30
21
29
- 3.5
- 40
- 1.2
75
45
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 70865
S10-1536-Rev. A, 19-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3477DV
Description P-Channel MOSFET
Maker Vishay Siliconix
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SI3477DV Datasheet PDF






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