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Si3473DV
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.023 @ VGS = -4.5 V -12 0.029 @ VGS = -2.5 V 0.041 @ VGS = -1.8 V
FEATURES
ID (A)
-7.9 - 7.0 - 5.9
D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
APPLICATIONS
D Load Switch D PA Switch
(4) S
TSOP-6 Top View
1 6 (3) G 3 mm 2 5
3
4 (1, 2, 5, 6) D P-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 5.7 IDM IS -1.7 2.0 1.0 -55 to 150 -20 -0.9 1.
SI3473DV Datasheet
