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Vishay Intertechnology Electronic Components Datasheet

SI3585CDV Datasheet

MOSFET

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Si3585CDV
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 20
0.058 at VGS = 4.5 V
0.078 at VGS = 2.5 V
P-Channel - 20 0.195 at VGS = - 4.5 V
0.316 at VGS = - 2.5 V
ID (A)a
3.9
3.3
- 2.1
- 1.7
Qg (Typ.)
2.9 nC
1.6 nC
TSOP-6
Top View
G1 1 6 D1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
• Drivers: Motor, Solenoid, Relay
D1 S2
3 mm S2
G2
25
34
2.85 mm
S1
Marking Code
D2
EC XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
TC = 25 °C
VGS
± 12
3.9 - 2.1
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
3.1
3.5b, c
2.8b, c
- 1.7
- 1.9b, c
- 1.5b, c
Pulsed Drain Current (t = 300 µs)
Source Drain Current Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
IDM
IS
12
1.2
0.9b, c
1.4
-5
- 1.1
- 0.9b, c
1.3
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
0.9
1.1b, c
0.7b, c
0.8
1.1b, c
0.7b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambientb, d
t5s
Symbol
RthJA
Typ.
93
Max.
110
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
75 90
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W for N-Channel and 155 °C/W for P-Channel.
P-Channel
Typ.
97
Max.
115
78 95
Unit
°C/W
Document Number: 67470
www.vishay.com
S11-0613-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI3585CDV Datasheet

MOSFET

No Preview Available !

www.DataSheet.co.kr
Si3585CDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 2.5 A
VGS = - 4.5 V, ID = - 1.9 A
VGS = 2.5 V, ID = 1 A
VGS = - 2.5 V, ID = - 1 A
VDS = 10 V, ID = 35 A
VDS = - 10 V, ID = - 1.9 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 5 V, ID = 3.5 A
Qg VDS = - 10 V, VGS = - 5 V, ID = - 1.9 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.5 A
Qgs
P-Channel
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 1.9 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
12
-5
0.9
1.2
Typ. Max. Unit
V
15
- 16.2
- 2.8
2.5
1.5
- 1.5
± 100
± 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.048
0.162
0.065
0.263
12
1
0.058
0.195
0.078
0.316
S
150
210
53
50
22
35
3.2 4.8
69
1.6 2.4
2.9 4.3
0.3
0.6
0.4
0.9
4.8 9.6
6.2 12.4
pF
nC
www.vishay.com
Document Number: 67470
2 S11-0613-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI3585CDV
Description MOSFET
Maker Vishay Siliconix
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SI3585CDV Datasheet PDF






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