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Vishay Intertechnology Electronic Components Datasheet

SI4048DY Datasheet

N-Channel MOSFET

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N-Channel 30 V (D-S) MOSFET
Si4048DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V
30
0.0105 at VGS = 4.5 V
ID (A)a
19.3
17.3
Qg (Typ.)
15 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook DC/DC
- High Side
D
G
Top View
Ordering Information: Si4048DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
30
± 20
19.3
15.3
12.7b, c
10.2b, c
70
20
20
5.1
2.2b, c
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Document Number: 66816
S10-2009-Rev. A, 06-Sep-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4048DY Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4048DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 15 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 15 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 4.0 A, VGS = 0 V
IF = 5.0 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1
30
0.15
Typ. Max. Unit
33
- 6.3
0.0070
0.0085
78
3
± 100
1
5
0.0085
0.0105
V
mV/°C
V
nA
µA
A
Ω
S
2060
335
132
34
15
6.5
4.0
0.65
19
11
18
8
10
9
21
8
0.76
23
13
12
11
51
23
1.3
35
22
35
16
20
18
40
16
5.1
70
1.1
45
25
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66816
S10-2009-Rev. A, 06-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4048DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI4048DY Datasheet PDF






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