Datasheet4U Logo Datasheet4U.com

SI4110DY - N-Channel MOSFET

Features

  • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS.

📥 Download Datasheet

Datasheet Details

Part number SI4110DY
Manufacturer Vishay
File Size 307.29 KB
Description N-Channel MOSFET
Datasheet download datasheet SI4110DY Datasheet

📁 Similar Datasheet

  • SI4112 - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
  • Si4112 - DUAL-BAND RF SYNTHESIZER (Skyworks)
  • SI4112G - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
  • Si4113 - DUAL-BAND RF SYNTHESIZER (Skyworks)
  • SI4113 - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
  • SI4113G - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
  • Si4101DY - P-Channel 30 V (D-S) MOSFET (Vishay)
  • Si4122 - DUAL-BAND RF SYNTHESIZER (Skyworks)
  • SI4122 - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
  • SI4122G - DUAL-BAND RF SYNTHESIZER (Silicon Laboratories)
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.013 at VGS = 10 V ID (A)a 17.3 Qg (Typ.) 35 nC FEATURES • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G • Primary Side Switch • Half Bridge • Intermediate Bus Converter D Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
Published: |