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Vishay Intertechnology Electronic Components Datasheet

SI4114DY Datasheet

N-Channel MOSFET

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Si4114DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.006 at VGS = 10 V
20
0.007 at VGS = 4.5 V
ID (A)a
20e
20e
Qg (Typ.)
27.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free)
Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low-Side MOSFET for Synchronous Buck
- Game Machine
- PC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
20
± 16
20e
18.2
15.2b, c
12.1b, c
50
5.1
2.2b, c
30
45
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package limited.
Symbol
RthJA
RthJF
Document Number: 68394
S09-0764-Rev. B, 04-May-09
Typical
39
18
Maximum
50
22
Unit
°C/W
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Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4114DY Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4114DY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
Forward Transconductancea
gfs VDS = 10 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 2 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
20 V
19
- 5.3
mV/°C
1.0 2.1 V
± 100
nA
1
µA
10
30 A
0.0049
0.0056
0.006
0.007
Ω
55 S
3700
745
315
62 95
27.5 42
8.0
6.0
0.15 0.7
1.4
30 55
13 25
60 100
30 55
13 25
9 18
38 65
8 16
0.71
26
16
13
13
5.1
50
1.1
50
30
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4114DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI4114DY Datasheet PDF






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