SI4172DY Datasheet | Vishay

FEATURES - Halogen-free - Trench FET® Power MOSFET - Optimized for High-Side Synchronous Rectifier Operation - 100 % Rg Tested - 100 % UIS Tested APPLICATIONS - Notebook CPU Core - High-Side Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 15 12 11b, c 9b, c 50 3.8 2.1b, c 22 24 4.5 2.8 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A m J Maximum Power Dissipation Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69000 S-82665-Rev. A, 03-Nov-08 .vishay. 1 Datasheet pdf - http://..net/ t ≤ 10 s Steady State Symbol Rth JA Rth JF Typical 38 22 Maximum 50 28 Unit °C/W .Data Sheet.co.kr Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V,...