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Vishay Intertechnology Electronic Components Datasheet

SI4172DY Datasheet

N-Channel MOSFET

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N-Channel 30-V (D-S) MOSFET
Si4172DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.012 at VGS = 10 V
0.015 at VGS = 4.5 V
ID (A)a
15
13
Qg (Typ.)
6.8 nC
FEATURES
Halogen-free
TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
D
G
Top View
Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
30
± 20
15
12
11b, c
9b, c
50
3.8
2.1b, c
22
24
4.5
2.8
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Symbol
RthJA
RthJF
Typical
38
22
Maximum
50
28
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SI4172DY Datasheet

N-Channel MOSFET

No Preview Available !

www.DataSheet.co.kr
Si4172DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 11 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 11 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 5 V, ID = 11 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.4 Ω
ID 9 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.4 Ω
ID 9 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 9 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.2
20
0.36
Typ.
Max.
Unit
28
-6
0.0097
0.0122
52
2.5
± 100
1
10
0.0120
0.0150
V
mV/°C
V
nA
µA
A
Ω
S
820
195 pF
73
15 23
6.8 10.2
nC
2.5
2.3
1.8 3.6 Ω
16 24
12 18
16 24
10 20
ns
8 16
10 20
16 24
8 15
25
A
50
0.8 1.2 V
15 30 ns
6 12 nC
8
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SI4172DY
Description N-Channel MOSFET
Maker Vishay Siliconix
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SI4172DY Datasheet PDF






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