* Compliant to RoHS Directive 2002/95/EC S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C
SI4501DY Datasheet (129.50 KB)
SI4501DY
Vishay ↗ Siliconix
129.50 KB
Complementary mosfet.
Si4501DY Vishay Siliconix Complementary MOSFET (N- and P-Channel) PRODUCT SUMMARY N-Channel VDS (V) 30 P-Channel -8 RDS(on) (Ω) 0.018 at VGS = 1.
📁 Related Datasheet
SI4501ADY Complementary MOSFET (Vishay Siliconix)
SI4501BD MOSFET (Vishay)
Si4501BDY Complementary (N- and P-Channel) MOSFET (Vishay)
SI4500BDY Complementary MOSFET (Vishay Siliconix)
SI4500DY Complementary MOSFET (Vishay Siliconix)
SI4505DY MOSFET (Vishay Siliconix)
SI4511DY MOSFET (Vishay Siliconix)
Si4532ADY N- and P-Channel MOSFET (Vishay)
SI4532CDY MOSFET (Vishay)
SI4532DY N- and P-Channel 30-V MOSFET (Vishay Siliconix)
