SI4726CY mosfet equivalent, n-channel mosfet.
D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times (30 ns typ.) D D D D 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side.
The Si4726CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It’s purpose is to simplify the use of n-channel MOSFETs in high frequency buck regul.
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