SI4724CY Datasheet | Vishay

FEATURES D D D D D 0- to 30-V Operation Driver Impedance- 3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V Switching Frequency: 250 k Hz to 1 MHz Integrated Schottky DESCRIPTION The Si4724CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It’s purpose is to simplify the use of n-channel MOSFETs in high frequency buck regulators. This device is designed to be used with any single output PWM IC or ASIC to produce a highly efficient low cost synchronous rectifier converter. A synchronous enable pin (disable = low, enable = high) controls the synchronous function for light load conditions. The Si4724CY is packaged in Vishay Siliconix’s high performance LITTLE FOOTR SO-16 package. FUNCTIONAL BLOCK DIAGRAM BOOT D1 Level Shift Undervoltage Lockout VDD IN SYNC EN Q1 S1 D2 Q2 + GND S2 VREF Document Number: 71863 S-03922- Rev. D, 19-May-03 .vishay. .. Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Logic Supply Logic Inputs Drain Voltage Bootstrap Voltage Synchronous Pin Voltage TA = 25_C Continuous Drain Current TA =70_C TA = 25_C TA =70_C Maximum Power Dissipationa Driver Operating Junction and Storage Temperature Range MOSFETs Tj, Tstg Symbol VDD VIN VD1 VBOOT VSYNC ID1 ID2 PD Steady State - 0.7 to VDD + 0.3 30 VS1 + 7 - 0.7 to VDD +0.3 5.1 4.09 6.5 5.2 1.2 - 65 to 125 - 65 to 150 Unit W _C Notes a. Surface mounted on 1” x1” FR4 board, full copper two sides. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended...