Datasheet4U Logo Datasheet4U.com

SI6866BDQ - Dual N-Channel MOSFET

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.

📥 Download Datasheet

Datasheet Details

Part number SI6866BDQ
Manufacturer Vishay
File Size 263.75 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI6866BDQ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Si6040 N-Channel MOSFET Nanxin
SI60DC100 DC Solid-State Relay TELEDYNE
Si6404DQ N-Channel MOSFET Vishay
Si6413DQ P-Channel MOSFET Vishay
Si6433DQ P-Channel 2.5-V (G-S) MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SI6866DQ Dual N-Channel MOSFET
SI6862DQ Dual N-Channel 20-V (D-S) MOSFET
SI6801DQ Fast Switching MOSFET
SI6802DQ Fast Switching MOSFET
SI6820DQ N-Channel Reduced Qg / MOSFET with Schottky Diode

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Published: |