SI6866BDQ Datasheet - Vishay Siliconix

Dual N-Channel MOSFET

SI6866BDQ General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the *55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bi.

SI6866BDQ Datasheet (263.75 KB)

SI6866BDQ Datasheet Preview — Preview of SI6866BDQ PDF

Datasheet Details

Part number:

SI6866BDQ

Manufacturer:

Vishay ↗ Siliconix

File Size:

263.75 KB

Description:

Dual n-channel mosfet.
www.DataSheet4U.com SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS N-Channel Vertical DMOS.

📁 Related Datasheet

SI6866DQ Dual N-Channel MOSFET (Vishay Siliconix)

SI6862DQ Dual N-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

SI6801DQ Fast Switching MOSFET (Vishay Siliconix)

SI6802DQ Fast Switching MOSFET (Vishay Siliconix)

SI6820DQ N-Channel Reduced Qg / MOSFET with Schottky Diode (Vishay Siliconix)

SI6821DQ P-Channel Reduced Qg / MOSFET with Schottky Diode (Vishay Siliconix)

SI6875DQ Dual P-Channel MOSFET (Vishay Siliconix)

SI6880EDQ N-Channel MOSFET (Vishay Siliconix)

Si6040 N-Channel MOSFET (Nanxin)

SI60DC100 DC Solid-State Relay (TELEDYNE)

TAGS

SI6866BDQ Dual N-Channel MOSFET Vishay Siliconix

Image Gallery

SI6866BDQ General Description

Datasheet Details

File Size:

Description:

SI6866BDQ Distributor