SI6866BDQ Datasheet | Vishay

.. SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS - N-Channel Vertical DMOS - Macro Model (Subcircuit Model) - Level 3 MOS - Apply for both Linear and Switching Application - Accurate over the - 55 to 125°C Temperature Range - Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold...