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Si6802DQ
Vishay Siliconix
N-Channel, Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20 www.DataSheet4U.com
rDS(on) (W)
0.075 @ VGS = 4.5 V 0.110 @ VGS = 3.0 V
ID (A)
"3.3 "2.7
D
TSSOP-8
D S S G 1 2 3 4 Top View S* N-Channel MOSFET D 8 D S S D *Source Pins 2, 3, 6, and 7 must be tied common. G
Si6802DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
20 "12 "3.3 "2.6 "20 1.25 1.5
Unit
V
A
W 1.