SI6821DQ Datasheet | Vishay

New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 r DS(on) (W) 0.190 @ VGS = - 4.5 V 0.280 @ VGS = - 3.0 V ID (A) "1.7 "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage 0.5 V @ 1 A IF (A) 1.5 S K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A D A G 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit - 20 20 "12 "1.7 "1.3 "8 - 1.0 1.5 30 1.2 0.76 1.0 0.64 - 55 to 150 Unit _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET...