SIA811DJ Datasheet - Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

SIA811DJ General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the *55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bi.

SIA811DJ Datasheet (268.91 KB)

SIA811DJ Datasheet Preview — Preview of SIA811DJ PDF

Datasheet Details

Part number:

SIA811DJ

Manufacturer:

Vishay ↗ Siliconix

File Size:

268.91 KB

Description:

P-channel 20-v (d-s) mosfet.
www.DataSheet4U.com SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode CHARACTERISTICS P-Channel .

📁 Related Datasheet

SiA811ADJ P-Channel 20-V (D-S) MOSFET (Vishay)

SiA810DJ N-channel MOSFET (Vishay)

SiA814DJ N-Channel 30-V (D-S) MOSFET (Vishay)

SiA400EDJ N-Channel 30 V (D-S) MOSFET (Vishay)

SiA406DJ N-Channel 12-V (D-S) MOSFET (Vishay)

SiA408DJ N-Channel 30 V (D-S) MOSFET (Vishay)

SiA413ADJ 12V P-Channel MOSFET (Vishay)

SIA413DJ P-Channel MOSFET (Vishay)

SIA414DJ Dual N-Channel 8-V (D-S) MOSFET (Vishay Siliconix)

SIA415DJ P-Channel 20-V (D-S) MOSFET (Vishay)

TAGS

SIA811DJ P-Channel 20-V D-S MOSFET Vishay Siliconix

Image Gallery

SIA811DJ General Description

Datasheet Details

File Size:

Description:

SIA811DJ Distributor