SIHG17N60D - D Series Power MOSFET

Vishay

Key Features

650 0.340.
Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-247AC G S D G S N-Channel MOSFET.

SIHG17N60D d series power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHG17N60D
Manufacturer	Vishay
File Size	253.02 KB
Description	D Series Power MOSFET
Datasheet	SIHG17N60D Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SiHG105N60EF	Power MOSFET	Vishay
SiHG11N80E	Power MOSFET	Vishay
SiHG150N60E	Power MOSFET	Vishay
SiHG155N60EF	EF Series Power MOSFET	Vishay
SIHG15N60E	MOSFET	Vishay

Other Datasheets by Vishay

Part Number	Description
SIHG20N50C	Power MOSFET
SIHG22N60E	Power MOSFET
SIHG22N60S-E3	(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET
SIHG24N65E	Power MOSFET
SIHG25N40D	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 90 14 22 Single D FEATURES 650 0.340 • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.vishay.