Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt Rating.
Logic-Level Gate Drive.
RDS(on) Specified at VGS = 4 V and 5 V.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Compliant to RoHS Directive 2002/95/EC
Available
RoHS.
Full PDF Text Transcription for SIHLZ14 (Reference)
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SIHLZ14. For precise diagrams, and layout, please refer to the original PDF.
Power MOSFET IRLZ14, SiHLZ14 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single TO-220A...
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(nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single TO-220AB D 0.20 S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.