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SIHLZ14L - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRLZ14S, SiHLZ14S).
  • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 5 V 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single I2PAK (TO-262) D2PAK (TO-263) 0.20 D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.