SIHLZ14L Overview
Description
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.
Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Advanced Process Technology
- Surface Mount (IRLZ14S, SiHLZ14S)
- Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
- 175 °C Operating Temperature
