SIHLZ14 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt Rating.
Logic-Level Gate Drive.
RDS(on) Specified at VGS = 4 V and 5 V.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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SIHLZ14 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHLZ14
Manufacturer	Vishay
File Size	1.13 MB
Description	Power MOSFET
Datasheet	SIHLZ14 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRLZ14, SiHLZ14 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single TO-220AB D 0.20 S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.