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SUB60N06-18 - N-Channel MOSFET

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www.DataSheet4U.com SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP60N06-18 G D S S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C www.DataSheet4U.com Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 60 39 Unit V A 120 60 180 120b W 3.
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