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SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V
ID (A)
45a 45a
D TrenchFETr Power MOSFETS D 175_C Junction Temperature
D
TO-263
G
G
D S
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N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 45a 34a 100 45 100 88c 3.