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SUP/SUB60N06-18
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.018
ID (A)
60
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G D S Top View SUP60N06-18
G
D S S
Top View SUB60N06-18
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C
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Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
60 "20 60 39
Unit
V
A 120 60 180 120b W 3.